Parallel Electron-Hole Bilayer Conductivity from Electronic Interface Reconstruction
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چکیده
منابع مشابه
Parallel electron-hole bilayer conductivity from electronic interface reconstruction.
The perovskite SrTiO3-LaAlO3 structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO3 capping layer prevents atomic reconstruction at the LaAlO3 surface and triggers the electronic reconstruction at a significantly lower LaAlO3 f...
متن کاملSupplementary information for ”Parallel electron-hole bilayer conductivity from electronic interface reconstruction”
R. Pentcheva,1 M. Huijben,2 K. Otte,1 W.E. Pickett,3 J.E. Kleibeuker,2 J. Huijben,2 H. Boschker,2 D. Kockmann,2 W. Siemons,4 G. Koster,2 H.J.W. Zandvliet,2 G. Rijnders,2 D.H.A. Blank,2 H. Hilgenkamp,2 and A. Brinkman2 Department of Earth and Environmental Sciences, University of Munich, Germany Faculty of Science and Technology and MESA Institute for Nanotechnology, University of Twente, The Ne...
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The electron-hole (EH) Bilayer Tunneling FieldEffect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for ...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2010
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.104.166804